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Part Number | FDP047AN08A0-F102 |
OEMstron Part # | FDP047AN08A0-F102 |
Manufacturer | ON Semiconductor |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 75V 80A TO-220AB-3 |
Lifecycle | Not For New Designs |
RoHS | No RoHS Information |
EDA/CAD Models | FDP047AN08A0-F102 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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FDP047AN08A0-F102 Specifications
Part Number | FDP047AN08A0-F102 | |
Brand | ON Semiconductor | |
Lifecycle | Not For New Designs | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | ON Semiconductor | |
Series | - | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 75V | |
Current - Continuous Drain (Id) @ 25°C | - | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | - | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | 310W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | TO-220-3 | |
Package / Case | TO-220-3 |
FDP047AN08A0-F102 Documents
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100 | $ 2.8393 | $ 283.9300 |
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