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Part Number | FQI8P10TU |
OEMstron Part # | FQI8P10TU |
Manufacturer | ON Semiconductor |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET P-CH 100V 8A I2PAK |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | FQI8P10TU PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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FQI8P10TU Specifications
Part Number | FQI8P10TU | |
Brand | ON Semiconductor | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | ON Semiconductor | |
Series | QFET® | |
FET Type | P-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 530mOhm @ 4A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
Vgs (Max) | ±30V | |
Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 3.75W (Ta), 65W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | I2PAK (TO-262) | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
FQI8P10TU Documents
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Part Number | Description | Stock |
FQI8P10TU Fairchild Semiconductor Corporation |
MOSFET P-CH 100V 8A I2PAK |
Contact Us |
Part Number | Description | Stock |
FQI8P10TU D# FQI8P10TU-ND ON Semiconductor |
MOSFET P-CH 100V 8A I2PAK |
Limited Supply - Call |
Part Number | Description | Stock |
FQI8P10TU D# NS-FQI8P10TU Fairchild Semiconductor Corporation |
OEM/CM ONLY |
2214 |
Part Number | Description | Stock |
FQI8P10TU Fairchild Semiconductor Corporation |
shipping today |
45635 |
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