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For Reference Only
| Part Number | GA10JT12-263 |
| OEMstron Part # | GA10JT12-263 |
| Manufacturer | GeneSiC Semiconductor |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | TRANS SJT 1200V 25A |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | GA10JT12-263 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
GA10JT12-263 Specifications
| Part Number | GA10JT12-263 | |
| Brand | GeneSiC Semiconductor | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | GeneSiC Semiconductor | |
| Series | - | |
| FET Type | - | |
| Technology | SiC (Silicon Carbide Junction Transistor) | |
| Drain to Source Voltage (Vdss) | 1200V | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 10A | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | 1403pF @ 800V | |
| FET Feature | - | |
| Power Dissipation (Max) | 170W (Tc) | |
| Operating Temperature | 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | - | |
| Package / Case | - |
GA10JT12-263 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
GA10JT12-263 GeneSic Semiconductor Inc |
TRANS SJT 1.2KV 10A |
Contact Us |
| Part Number | Description | Stock |
|
GA10JT12-263 D# 1242-1186-ND GeneSic Semiconductor Inc |
TRANS SJT 1200V 25A |
170 In Stock |
| Part Number | Description | Stock |
|
GA10JT12263 GENESIC SEMICONDUCTOR |
OEM/CM QUOTES ONLY | NO BROKERS |
196 |
| Part Number | Description | Stock |
|
GA10JT12-263 GeneSic Semiconductor Inc |
RoHS: Compliant
|
0 |
| Part Number | Description | Stock |
|
GA10JT12-263 GeneSic Semiconductor Inc |
Silicon Carbide (SiC) Junction Transistor1200V100m? TO-263-7 RoHS: Compliant
|
0 in Stock 0 on Order |
| Part Number | Description | Stock |
|
GA10JT12-263 D# GS0000000000006 GeneSic Semiconductor Inc |
Silicon Carbide (SiC) Junction Transistor1200V100m? TO-263-7 |
0 |
| Part Number | Description | Stock |
|
GA10JT12-263 D# 08X5868 GeneSic Semiconductor Inc |
SIC JUNCTION TRANSISTOR, 1.2KV, 10A, TO-263, MOSFET Configuration:Single, Transistor Polarity:N Channel, Continuous Drain Current Id:10A, Drain Source Voltage Vds:1.2kV, On Resistance Rds(on):-, No. of Pins:3Pins, Product Range:- RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1250
Container: Bulk
|
0 |
| Part Number | Description | Stock |
|
GA10JT12-263 GeneSic Semiconductor Inc |
RoHS: Compliant
|
0 |
| Part Number | Description | Stock |
|
GA10JT12263 GeneSic Semiconductor Inc |
OEM/CM ONLY |
265 |
| Part Number | Description | Stock |
|
GA10JT12-263 D# 2362866 GeneSic Semiconductor Inc |
SIC JUNCTION TRANSISTOR, 1.2KV, 10A, TO- RoHS: Compliant
Min Qty: 1
Container: Each
|
0 |
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| Quote Limit | No Limit |
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