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GP1M003A090C

GP1M003A090C
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Part Number GP1M003A090C
OEMstron Part # GP1M003A090C
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 900V 2.5A DPAK
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP1M003A090C PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 27 - Dec 2 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GP1M003A090C Specifications

Part Number GP1M003A090C
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.1Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 748pF @ 25V
FET Feature -
Power Dissipation (Max) 94W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

GP1M003A090C Documents

GP1M003A090C, GP1M003A090C Datasheet (Total Pages: 6, Size: 959.36 KB)
GP1M003A090PH Datasheet CoverGP1M003A090PH Datasheet Page 2GP1M003A090PH Datasheet Page 3GP1M003A090PH Datasheet Page 4GP1M003A090PH Datasheet Page 5GP1M003A090PH Datasheet Page 6
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Part Number Description Stock

GP1M003A090C

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3076

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