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GP1M008A080FH

GP1M008A080FH
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For Reference Only

Part Number GP1M008A080FH
OEMstron Part # GP1M008A080FH
Manufacturer Global Power Technologies Group
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 8A TO220F
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models GP1M008A080FH PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GP1M008A080FH Specifications

Part Number GP1M008A080FH
Brand Global Power Technologies Group
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Global Power Technologies Group
Series -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1921pF @ 25V
FET Feature -
Power Dissipation (Max) 40.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220F
Package / Case TO-220-3 Full Pack

GP1M008A080FH Documents

GP1M008A080FH, GP1M008A080FH Datasheet (Total Pages: 7, Size: 1,382.17 KB)
GP1M008A080H Datasheet CoverGP1M008A080H Datasheet Page 2GP1M008A080H Datasheet Page 3GP1M008A080H Datasheet Page 4GP1M008A080H Datasheet Page 5GP1M008A080H Datasheet Page 6GP1M008A080H Datasheet Page 7
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