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| Part Number | HAT1127HWS-E |
| OEMstron Part # | HAT1127HWS-E |
| Manufacturer | Renesas Electronics America |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET P-CH SOP8 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | HAT1127HWS-E PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Mar 22 - Mar 27 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
HAT1127HWS-E Specifications
| Part Number | HAT1127HWS-E | |
| Brand | Renesas Electronics America | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Renesas Electronics America | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 20A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V | |
| Vgs (Max) | +10V, -20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 30W (Tc) | |
| Operating Temperature | 150°C | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 5-LFPAK | |
| Package / Case | SC-100, SOT-669 |
HAT1127HWS-E Documents
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