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IAUC120N04S6N009ATMA1

IAUC120N04S6N009ATMA1
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Part Number IAUC120N04S6N009ATMA1
OEMstron Part # IAUC120N04S6N009ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 40V 120A PG-HSOG-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IAUC120N04S6N009ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 3 - Mar 8 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IAUC120N04S6N009ATMA1 Specifications

Part Number IAUC120N04S6N009ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7V, 10V
Rds On (Max) @ Id, Vgs 0.9mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 3.4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7360pF @ 25V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8-33
Package / Case 8-PowerTDFN

IAUC120N04S6N009ATMA1 Documents

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