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IMW120R045M1XKSA1

IMW120R045M1XKSA1
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Part Number IMW120R045M1XKSA1
OEMstron Part # IMW120R045M1XKSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description COOLSIC MOSFETS 1200V
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IMW120R045M1XKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 25 - Jan 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IMW120R045M1XKSA1 Specifications

Part Number IMW120R045M1XKSA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolSiC™
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1.2kV
Current - Continuous Drain (Id) @ 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 59mOhm @ 20A, 15V
Vgs(th) (Max) @ Id 5.7V @ 10mA
Gate Charge (Qg) (Max) @ Vgs 52nC @ 15V
Vgs (Max) +20V, -10V
Input Capacitance (Ciss) (Max) @ Vds 1.9nF @ 800V
FET Feature -
Power Dissipation (Max) 228W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3

IMW120R045M1XKSA1 Documents

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