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Part Number | IMW120R045M1XKSA1 |
OEMstron Part # | IMW120R045M1XKSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | COOLSIC MOSFETS 1200V |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IMW120R045M1XKSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IMW120R045M1XKSA1 Specifications
Part Number | IMW120R045M1XKSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolSiC™ | |
FET Type | N-Channel | |
Technology | SiC (Silicon Carbide Junction Transistor) | |
Drain to Source Voltage (Vdss) | 1.2kV | |
Current - Continuous Drain (Id) @ 25°C | 52A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 15V | |
Rds On (Max) @ Id, Vgs | 59mOhm @ 20A, 15V | |
Vgs(th) (Max) @ Id | 5.7V @ 10mA | |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 15V | |
Vgs (Max) | +20V, -10V | |
Input Capacitance (Ciss) (Max) @ Vds | 1.9nF @ 800V | |
FET Feature | - | |
Power Dissipation (Max) | 228W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-3-41 | |
Package / Case | TO-247-3 |
IMW120R045M1XKSA1 Documents
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