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IMW120R060M1HXKSA1

IMW120R060M1HXKSA1
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Part Number IMW120R060M1HXKSA1
OEMstron Part # IMW120R060M1HXKSA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description COOLSIC MOSFETS 1200V
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IMW120R060M1HXKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Mar 31 - Apr 5 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IMW120R060M1HXKSA1 Specifications

Part Number IMW120R060M1HXKSA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolSiC™
FET Type N-Channel
Technology SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1.2kV
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 18V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 1.06nF @ 800V
FET Feature -
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3

IMW120R060M1HXKSA1 Documents

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