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Part Number | IMZ120R030M1HXKSA1 |
OEMstron Part # | IMZ120R030M1HXKSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | COOLSIC MOSFETS 1200V |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IMZ120R030M1HXKSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IMZ120R030M1HXKSA1 Specifications
Part Number | IMZ120R030M1HXKSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolSiC™ | |
FET Type | N-Channel | |
Technology | SiC (Silicon Carbide Junction Transistor) | |
Drain to Source Voltage (Vdss) | 1.2kV | |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
Rds On (Max) @ Id, Vgs | 40mOhm @ 25A, 18V | |
Vgs(th) (Max) @ Id | 5.7V @ 10mA | |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 18V | |
Vgs (Max) | +23V, -7V | |
Input Capacitance (Ciss) (Max) @ Vds | 2.12nF @ 800V | |
FET Feature | - | |
Power Dissipation (Max) | 227W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO247-4-1 | |
Package / Case | TO-247-4 |
IMZ120R030M1HXKSA1 Documents
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