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For Reference Only
| Part Number | IPB017N10N5LFATMA1 |
| OEMstron Part # | IPB017N10N5LFATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 100V D2PAK-7 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPB017N10N5LFATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPB017N10N5LFATMA1 Specifications
| Part Number | IPB017N10N5LFATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™-5 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4.1V @ 270µA | |
| Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 313W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-7 | |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
IPB017N10N5LFATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 D# V72:2272_17076743 Infineon Technologies AG |
Trans MOSFET N-CH 100V 180A 7-Pin(6+Tab) D2PAK T/R |
Americas - 0 |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 D# IPB017N10N5LFATMA1 Infineon Technologies AG |
DIFFERENTIATED MOSFETS - Tape and Reel (Alt: IPB017N10N5LFATMA1) |
Americas - 0 |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 D# SP001503850 Infineon Technologies AG |
DIFFERENTIATED MOSFETS (Alt: SP001503850) RoHS: Compliant
|
Europe - 0 |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 D# IPB017N10N5LFATMA1TR-ND Infineon Technologies AG |
MOSFET N-CH 100V 180A TO263-7 |
On Order |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 D# 2986455 Infineon Technologies AG |
MOSFET, N-CH, 100V, 180A, 313W, TO-263 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 Infineon Technologies AG |
N-Channel 100V 180A 313W Surface Mount PG-TO263-7 RoHS: Compliant
pbFree: Yes
|
0 Reel |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
3663 |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 D# 93AC7097 Infineon Technologies AG |
MOSFET, N-CH, 100V, 180A, 313W, TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:180A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0015ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.3V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 Infineon Technologies AG |
OEM/CM ONLY |
1336 |
| Part Number | Description | Stock |
|
IPB017N10N5LFATMA1 D# 2986455 Infineon Technologies AG |
MOSFET, N-CH, 100V, 180A, 313W, TO-263 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
18 |
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Quick Inquiry
| In Stock | 120 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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