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For Reference Only
| Part Number | IPB020N10N5LFATMA1 |
| OEMstron Part # | IPB020N10N5LFATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 100V D2PAK-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPB020N10N5LFATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPB020N10N5LFATMA1 Specifications
| Part Number | IPB020N10N5LFATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™-5 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V | |
| Vgs(th) (Max) @ Id | 4.1V @ 270µA | |
| Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 840pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 313W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB020N10N5LFATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPB020N10N5LFATMA1 D# V36:1790_17076744 Infineon Technologies AG |
Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK T/R |
Americas - 0 |
| Part Number | Description | Stock |
|
IPB020N10N5LFATMA1 D# IPB020N10N5LFATMA1 Infineon Technologies AG |
Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB020N10N5LFATMA1) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
IPB020N10N5LFATMA1 D# SP001503854 Infineon Technologies AG |
Transistor MOSFET N-CH 100V 120A 3-Pin TO-263 T/R (Alt: SP001503854) RoHS: Compliant
|
Europe - 0 |
| Part Number | Description | Stock |
|
IPB020N10N5LFATMA1 D# IPB020N10N5LFATMA1TR-ND Infineon Technologies AG |
MOSFET N-CH 100V 120A TO263-3 |
On Order |
| Part Number | Description | Stock |
|
IPB020N10N5LFATMA1 D# 2986456RL Infineon Technologies AG |
MOSFET, N-CH, 100V, 120A, 313W, TO-263 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
IPB020N10N5LFATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
964 |
| Part Number | Description | Stock |
|
IPB020N10N5LFATMA1 D# 93AC7098 Infineon Technologies AG |
MOSFET, N-CH, 100V, 120A, 150DEG C, 313W, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:120A, On Resistance Rds(on):0.0018ohm, Transistor Mounting:Surface Mount, Threshold Voltage Vgs:3.3V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
IPB020N10N5LFATMA1 D# 2986456 Infineon Technologies AG |
MOSFET, N-CH, 100V, 120A, 313W, TO-263 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
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| In Stock | 433 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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