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Part Number | IPB025N10N3GE8187ATMA1 |
OEMstron Part # | IPB025N10N3GE8187ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 180A TO263-7 |
Lifecycle | Not For New Designs |
RoHS | No RoHS Information |
EDA/CAD Models | IPB025N10N3GE8187ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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IPB025N10N3GE8187ATMA1 Specifications
Part Number | IPB025N10N3GE8187ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Not For New Designs | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 180A | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 275µA | |
Gate Charge (Qg) (Max) @ Vgs | 206nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 14800pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 300W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO263-7 | |
Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
IPB025N10N3GE8187ATMA1 Documents
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