For Reference Only
Part Number | IPB35N10S3L26ATMA1 |
OEMstron Part # | IPB35N10S3L26ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH TO263-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPB35N10S3L26ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 4 - Feb 9 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPB35N10S3L26ATMA1 Specifications
Part Number | IPB35N10S3L26ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | Automotive, AEC-Q101, OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 26.3mOhm @ 35A, 10V | |
Vgs(th) (Max) @ Id | 2.4V @ 39µA | |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 71W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | D²PAK (TO-263AB) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB35N10S3L26ATMA1 Documents
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Part Number | Description | Stock |
IPB35N10S3L26ATMA1 D# E02:0323_02823361 Infineon Technologies AG |
Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R |
Europe - 1000 |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 D# IPB35N10S3L26ATMA1 Infineon Technologies AG |
Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB35N10S3L26ATMA1) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 D# 448-IPB35N10S3L26ATMA1TR-ND Infineon Technologies AG |
MOSFET N-CH 100V 35A D2PAK |
On Order |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 D# 2781070 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 100V, TO-263 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
812 |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
3480 |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 D# 726-IPB35N10S3L26ATM Infineon Technologies AG |
MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T RoHS: Compliant
|
1183 |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 D# 34AC1657 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 100V, TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0203ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
520 |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
937 |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 D# 19735355 Infineon Technologies AG |
Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R |
Americas - 1000 |
Part Number | Description | Stock |
IPB35N10S3L26ATMA1 D# 2781070 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 100V, TO-263 RoHS: Compliant
Min Qty: 5
Container: Cut Tape
|
803 |
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Quick Inquiry
In Stock | 223 - More on Order |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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100 | $ 0.0000 | $ 0.0000 |
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