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IPB35N10S3L26ATMA1

IPB35N10S3L26ATMA1
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Part Number IPB35N10S3L26ATMA1
OEMstron Part # IPB35N10S3L26ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH TO263-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPB35N10S3L26ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Apr 8 - Apr 13 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPB35N10S3L26ATMA1 Specifications

Part Number IPB35N10S3L26ATMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 26.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2.4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB35N10S3L26ATMA1 Documents

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Part Number Description Stock

IPB35N10S3L26ATMA1

D# E02:0323_02823361

Infineon Technologies AG

Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R

Europe - 1000
Part Number Description Stock

IPB35N10S3L26ATMA1

D# IPB35N10S3L26ATMA1

Infineon Technologies AG

Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB35N10S3L26ATMA1)

RoHS: Compliant
Americas - 0
Part Number Description Stock

IPB35N10S3L26ATMA1

D# 448-IPB35N10S3L26ATMA1TR-ND

Infineon Technologies AG

MOSFET N-CH 100V 35A D2PAK

On Order
Part Number Description Stock

IPB35N10S3L26ATMA1

D# 2781070

Infineon Technologies AG

MOSFET, AEC-Q101, N-CH, 100V, TO-263

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
812
Part Number Description Stock

IPB35N10S3L26ATMA1

Infineon Technologies AG

OEM/CM QUOTES ONLY | NO BROKERS

3480
Part Number Description Stock

IPB35N10S3L26ATMA1

D# 726-IPB35N10S3L26ATM

Infineon Technologies AG

MOSFET N-Ch 100V 35A D2PAK-2 OptiMOS-T

RoHS: Compliant
1183
Part Number Description Stock

IPB35N10S3L26ATMA1

D# 34AC1657

Infineon Technologies AG

MOSFET, AEC-Q101, N-CH, 100V, TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0203ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power RoHS Compliant: Yes

RoHS: Compliant
Min Qty: 1
Container: Cut Tape
520
Part Number Description Stock

IPB35N10S3L26ATMA1

Infineon Technologies AG

OEM/CM ONLY

937
Part Number Description Stock

IPB35N10S3L26ATMA1

D# 19735355

Infineon Technologies AG

Trans MOSFET N-CH 100V 35A Automotive 3-Pin(2+Tab) D2PAK T/R

Americas - 1000
Part Number Description Stock

IPB35N10S3L26ATMA1

D# 2781070

Infineon Technologies AG

MOSFET, AEC-Q101, N-CH, 100V, TO-263

RoHS: Compliant
Min Qty: 5
Container: Cut Tape
803

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In Stock223 - More on Order
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Lead-TimeTo be Confirmed
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