For Reference Only
Part Number | IPB60R099C7ATMA1 |
OEMstron Part # | IPB60R099C7ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 650V 22A TO263-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPB60R099C7ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPB60R099C7ATMA1 Specifications
Part Number | IPB60R099C7ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ C7 | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 650V | |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 99mOhm @ 9.7A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 490µA | |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1819pF @ 400V | |
FET Feature | - | |
Power Dissipation (Max) | 110W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO263-3 | |
Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
IPB60R099C7ATMA1 Documents
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Part Number | Description | Stock |
IPB60R099C7ATMA1 D# E02:0323_09406546 Infineon Technologies AG |
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R |
Europe - 1000 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 D# IPB60R099C7ATMA1 Infineon Technologies AG |
MOSFET HIGH POWER_NEW - Bulk (Alt: IPB60R099C7ATMA1) RoHS: Compliant
|
Americas - 178 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 D# SP001297998 Infineon Technologies AG |
MOSFET HIGH POWER_NEW (Alt: SP001297998) RoHS: Compliant
|
Europe - 0 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 D# IPB60R099C7ATMA1CT-ND Infineon Technologies AG |
MOSFET N-CH 650V 22A TO263-3 |
846 In Stock |
Part Number | Description | Stock |
IPB60R099C7ATMA1 Infineon Technologies AG |
In stock shipping within 2days |
130 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 D# 3227632 Infineon Technologies AG |
MOSFET, N-CH, 650V, 150DEG C, 110W RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
830 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
1160 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 D# 726-IPB60R099C7ATMA1 Infineon Technologies AG |
MOSFET HIGH POWER_NEW RoHS: Compliant
|
828 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 D# 39AH8899 Infineon Technologies AG |
MOSFET, N-CH, 650V, 150DEG C, 110W ROHS COMPLIANT: YES RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
780 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 Infineon Technologies AG |
IPB60R099 - 22A, 600V, N-Channel Power MOSFET, TO-263AB RoHS: Compliant
|
60 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
948 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 D# 24260181 Infineon Technologies AG |
Trans MOSFET N-CH 600V 37.9A 3-Pin(2+Tab) D2PAK T/R |
Americas - 1000 |
Part Number | Description | Stock |
IPB60R099C7ATMA1 D# 3227632 Infineon Technologies AG |
MOSFET, N-CH, 650V, 150DEG C, 110W RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
780 |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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