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For Reference Only
| Part Number | IPB60R120C7ATMA1 |
| OEMstron Part # | IPB60R120C7ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 650V 19A TO263-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPB60R120C7ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPB60R120C7ATMA1 Specifications
| Part Number | IPB60R120C7ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ C7 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 7.8A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 390µA | |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 400V | |
| FET Feature | - | |
| Power Dissipation (Max) | 92W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO263-3 | |
| Package / Case | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
IPB60R120C7ATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 D# IPB60R120C7ATMA1 Infineon Technologies AG |
Transistor MOSFET N-CH 600V 19A 3-Pin TO-263 T/R - Bulk (Alt: IPB60R120C7ATMA1) RoHS: Compliant
|
Americas - 1705 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 D# SP001385048 Infineon Technologies AG |
Transistor MOSFET N-CH 600V 19A 3-Pin TO-263 T/R (Alt: SP001385048) RoHS: Compliant
|
Europe - 2000 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 D# IPB60R120C7ATMA1CT-ND Infineon Technologies AG |
MOSFET N-CH 650V 19A TO263-3 |
922 In Stock |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 D# 2986357RL Infineon Technologies AG |
MOSFET, N-CH, 600V, 19A, 92W, TO-263 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
2320 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 D# 726-IPB60R120C7ATMA1 Infineon Technologies AG |
MOSFET HIGH POWER_NEW RoHS: Compliant
|
830 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 D# XSKDRABS0033126 Infineon Technologies AG |
PG-TO263-3HIGH POWER_NEW |
2000 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 D# 93AC7105 Infineon Technologies AG |
MOSFET, N-CH, 600V, 19A, 92W, TO-263, Transistor Polarity:N Channel, Continuous Drain Current Id:19A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.103ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
892 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 Infineon Technologies AG |
IPB60R120 - 600V CoolMOS N-Channel Power MOSFET RoHS: Compliant
|
1705 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
2016 |
| Part Number | Description | Stock |
|
IPB60R120C7ATMA1 D# 2986357 Infineon Technologies AG |
MOSFET, N-CH, 600V, 19A, 92W, TO-263 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
892 |
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Quick Inquiry
| In Stock | 313 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
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|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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