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Part Number | IPB60R230P6ATMA1 |
OEMstron Part # | IPB60R230P6ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 600V 16.8A 3TO263 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IPB60R230P6ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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IPB60R230P6ATMA1 Specifications
Part Number | IPB60R230P6ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ P6 | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 16.8A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 230mOhm @ 6.4A, 10V | |
Vgs(th) (Max) @ Id | 4.5V @ 530µA | |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1450pF @ 100V | |
FET Feature | - | |
Power Dissipation (Max) | 126W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO263-3 | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IPB60R230P6ATMA1 Documents
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Part Number | Description | Stock |
IPB60R230P6ATMA1 D# IPB60R230P6ATMA1-ND Infineon Technologies AG |
MOSFET N-CH 600V 16.8A TO263-3 |
Limited Supply - Call |
Part Number | Description | Stock |
IPB60R230P6ATMA1 Infineon Technologies AG |
shipping today |
3319 |
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