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IPB65R280E6ATMA1

IPB65R280E6ATMA1
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Part Number IPB65R280E6ATMA1
OEMstron Part # IPB65R280E6ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH TO263-3
Lifecycle Not For New Designs
RoHS No RoHS Information
EDA/CAD Models IPB65R280E6ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Dec 6 - Dec 11 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPB65R280E6ATMA1 Specifications

Part Number IPB65R280E6ATMA1
Brand Infineon Technologies
Lifecycle Not For New Designs
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ E6
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 280mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 100V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IPB65R280E6ATMA1 Documents

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Part Number Description Stock

IPB65R280E6ATMA1

D# IPB65R280E6ATMA1

Infineon Technologies AG

Trans MOSFET N-CH 650(Min)V 13.8A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB65R280E6ATMA1)

RoHS: Compliant
Americas - 0
Part Number Description Stock

IPB65R280E6ATMA1

Infineon Technologies AG

COOL MOS - Tape and Reel

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Part Number Description Stock

IPB65R280E6ATMA1

D# IPB65R280E6ATMA1-ND

Infineon Technologies AG

MOSFET N-CH 650V 13.8A D2PAK

Limited Supply - Call

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