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Part Number | IPC218N06N3X1SA2 |
OEMstron Part # | IPC218N06N3X1SA2 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 60V 3A SAWN ON FOIL |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPC218N06N3X1SA2 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPC218N06N3X1SA2 Specifications
Part Number | IPC218N06N3X1SA2 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 3A (Tj) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 196µA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | Sawn on foil | |
Package / Case | Die |
IPC218N06N3X1SA2 Documents
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Part Number | Description | Stock |
IPC218N06N3X1SA2 D# IPC218N06N3X1SA2 Infineon Technologies AG |
Trans MOSFET N-CH 60V DIE Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IPC218N06N3X1SA2) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
IPC218N06N3X1SA2 D# SP000544188 Infineon Technologies AG |
Trans MOSFET N-CH 60V DIE Wafer (Alt: SP000544188) |
Europe - 0 |
Part Number | Description | Stock |
IPC218N06N3X1SA2 Infineon Technologies AG |
RoHS: Compliant
pbFree: Yes
|
0 |
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