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Part Number | IPC26N12NX1SA1 |
OEMstron Part # | IPC26N12NX1SA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 120V 1A SAWN ON FOIL |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPC26N12NX1SA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPC26N12NX1SA1 Specifications
Part Number | IPC26N12NX1SA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 120V | |
Current - Continuous Drain (Id) @ 25°C | 1A (Tj) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 2A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 244µA | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | - | |
Mounting Type | Surface Mount | |
Supplier Device Package | Sawn on foil | |
Package / Case | Die |
IPC26N12NX1SA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
IPC26N12NX1SA1 D# V36:1790_06391845 Infineon Technologies AG |
Trans MOSFET N-CH 120V Automotive 3-Pin Chip Wafer RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
IPC26N12NX1SA1 D# IPC26N12NX1SA1 Infineon Technologies AG |
Trans MOSFET N-CH 120V DIE Wafer - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IPC26N12NX1SA1) |
Americas - 0 |
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