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Part Number | IPC60R099C6UNSAWNX6SA1 |
OEMstron Part # | IPC60R099C6UNSAWNX6SA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH BARE DIE |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IPC60R099C6UNSAWNX6SA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPC60R099C6UNSAWNX6SA1 Specifications
Part Number | IPC60R099C6UNSAWNX6SA1 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | - | |
FET Type | - | |
Technology | - | |
Drain to Source Voltage (Vdss) | - | |
Current - Continuous Drain (Id) @ 25°C | - | |
Drive Voltage (Max Rds On, Min Rds On) | - | |
Rds On (Max) @ Id, Vgs | - | |
Vgs(th) (Max) @ Id | - | |
Gate Charge (Qg) (Max) @ Vgs | - | |
Vgs (Max) | - | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
FET Feature | - | |
Power Dissipation (Max) | - | |
Operating Temperature | - | |
Mounting Type | - | |
Supplier Device Package | - | |
Package / Case | - |
IPC60R099C6UNSAWNX6SA1 Documents
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Lead-Time | To be Confirmed |
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