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| Part Number | IPC60R190E6UNSAWNX6SA1 |
| OEMstron Part # | IPC60R190E6UNSAWNX6SA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH BARE DIE |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPC60R190E6UNSAWNX6SA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 18 - Feb 23 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPC60R190E6UNSAWNX6SA1 Specifications
| Part Number | IPC60R190E6UNSAWNX6SA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | - | |
| FET Type | - | |
| Technology | - | |
| Drain to Source Voltage (Vdss) | - | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Drive Voltage (Max Rds On, Min Rds On) | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) (Max) @ Vgs | - | |
| Vgs (Max) | - | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| FET Feature | - | |
| Power Dissipation (Max) | - | |
| Operating Temperature | - | |
| Mounting Type | - | |
| Supplier Device Package | - | |
| Package / Case | - |
IPC60R190E6UNSAWNX6SA1 Documents
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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