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Part Number | IPD050N03LGBTMA1 |
OEMstron Part # | IPD050N03LGBTMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 30V 50A TO252-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPD050N03LGBTMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IPD050N03LGBTMA1 Specifications
Part Number | IPD050N03LGBTMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 30V | |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 5mOhm @ 30A, 10V | |
Vgs(th) (Max) @ Id | 2.2V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 15V | |
FET Feature | - | |
Power Dissipation (Max) | 68W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3-11 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD050N03LGBTMA1 Documents
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Part Number | Description | Stock |
IPD050N03LGBTMA1 D# IPD050N03LGBTMA1-ND Infineon Technologies AG |
MOSFET N-CH 30V 50A TO252-31 |
Limited Supply - Call |
Part Number | Description | Stock |
IPD050N03LGBTMA1 D# 7545452 Infineon Technologies AG |
N-Channel MOSFET, 50 A, 30 V, 3-Pin DPAK Infineon IPD050N03LGBTMA1, TA Min Qty: 5
Container: Ammo Pack
|
85 |
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