For Reference Only
Part Number | IPD082N10N3GATMA1 |
OEMstron Part # | IPD082N10N3GATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 80A TO252-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPD082N10N3GATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 25 - Jan 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPD082N10N3GATMA1 Specifications
Part Number | IPD082N10N3GATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 8.2mOhm @ 73A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 75µA | |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 3980pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 125W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD082N10N3GATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
IPD082N10N3GATMA1 D# V72:2272_06384005 Infineon Technologies AG |
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R |
Americas - 39 |
Part Number | Description | Stock |
IPD082N10N3GATMA1 D# IPD082N10N3GATMA1 Infineon Technologies AG |
Trans MOSFET N-CH 100V 80A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD082N10N3GATMA1) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
IPD082N10N3GATMA1 D# IPD082N10N3GATMA1CT-ND Infineon Technologies AG |
MOSFET N-CH 100V 80A TO252-3 |
298 In Stock |
Part Number | Description | Stock |
IPD082N10N3GATMA1 D# 2709872 Infineon Technologies AG |
MOSFET, N-CH, 100V, 80A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
3262 |
Part Number | Description | Stock |
IPD082N10N3GATMA1 Infineon Technologies AG |
Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS™ Power Mosfet - DPAK RoHS: Contact Manufacturer
pbFree: Yes
|
0 Reel |
Part Number | Description | Stock |
IPD082N10N3GATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
23200 |
Part Number | Description | Stock |
IPD082N10N3GATMA1 D# XSKDRABV0052437 Infineon Technologies AG |
20000 |
Part Number | Description | Stock |
IPD082N10N3GATMA1 D# 12AC9706 Infineon Technologies AG |
MOSFET, N-CH, 100V, 80A, 175DEG C, 125W, Transistor Polarity:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:80A, On Resistance Rds(on):0.007ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
278 |
Part Number | Description | Stock |
IPD082N10N3GATMA1 Infineon Technologies AG |
OEM/CM ONLY |
56 |
Part Number | Description | Stock |
IPD082N10N3GATMA1 D# 34386453 Infineon Technologies AG |
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) DPAK T/R |
Americas - 39 |
Part Number | Description | Stock |
IPD082N10N3GATMA1 D# 2709872 Infineon Technologies AG |
MOSFET, N-CH, 100V, 80A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
25 |
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