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Part Number | IPD096N08N3GBTMA1 |
OEMstron Part # | IPD096N08N3GBTMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 80V 73A TO252-3 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IPD096N08N3GBTMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IPD096N08N3GBTMA1 Specifications
Part Number | IPD096N08N3GBTMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 80V | |
Current - Continuous Drain (Id) @ 25°C | 73A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 9.6mOhm @ 46A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 46µA | |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 40V | |
FET Feature | - | |
Power Dissipation (Max) | 100W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD096N08N3GBTMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
IPD096N08N3GBTMA1 D# 2156-IPD096N08N3GBTMA1-ND Rochester Electronics LLC |
MOSFET N-CH 80V 73A TO252-3 |
Limited Supply - Call |
Part Number | Description | Stock |
IPD096N08N3GBTMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
11744 |
Part Number | Description | Stock |
IPD096N08N3GBTMA1 Infineon Technologies AG |
OEM/CM ONLY |
10140 |
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Lead-Time | To be Confirmed |
Minimum | 1 |
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