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IPD096N08N3GBTMA1

IPD096N08N3GBTMA1
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For Reference Only

Part Number IPD096N08N3GBTMA1
OEMstron Part # IPD096N08N3GBTMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 80V 73A TO252-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD096N08N3GBTMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD096N08N3GBTMA1 Specifications

Part Number IPD096N08N3GBTMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 9.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 40V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD096N08N3GBTMA1 Documents

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Part Number Description Stock

IPD096N08N3GBTMA1

D# 2156-IPD096N08N3GBTMA1-ND

Rochester Electronics LLC

MOSFET N-CH 80V 73A TO252-3

Limited Supply - Call
Part Number Description Stock

IPD096N08N3GBTMA1

Infineon Technologies AG

OEM/CM QUOTES ONLY | NO BROKERS

11744
Part Number Description Stock

IPD096N08N3GBTMA1

Infineon Technologies AG

OEM/CM ONLY

10140

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