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IPD15N06S2L64ATMA1

IPD15N06S2L64ATMA1
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Part Number IPD15N06S2L64ATMA1
OEMstron Part # IPD15N06S2L64ATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 55V 19A TO252-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPD15N06S2L64ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD15N06S2L64ATMA1 Specifications

Part Number IPD15N06S2L64ATMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 64mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2V @ 14µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 354pF @ 25V
FET Feature -
Power Dissipation (Max) 47W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD15N06S2L64ATMA1 Documents

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Part Number Description Stock

IPD15N06S2L64ATMA1

D# IPD15N06S2L64ATMA1

Infineon Technologies AG

Trans MOSFET N-CH 55V 19A 3-Pin TO-252 T/R - Bulk (Alt: IPD15N06S2L64ATMA1)

Americas - 2500
Part Number Description Stock

IPD15N06S2L64ATMA1

D# 2156-IPD15N06S2L64ATMA1-ND

Rochester Electronics LLC

MOSFET N-CH 55V 19A TO252-3

2500 In Stock
Part Number Description Stock

IPD15N06S2L64ATMA1

Infineon Technologies AG

IPD15N06 - 55V-60V N-Channel Automotive MOSFET

RoHS: Compliant
2500

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