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| Part Number | IPD15N06S2L64ATMA2 |
| OEMstron Part # | IPD15N06S2L64ATMA2 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | N-CHANNEL_55/60V |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD15N06S2L64ATMA2 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPD15N06S2L64ATMA2 Specifications
| Part Number | IPD15N06S2L64ATMA2 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55V | |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 13A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 14µA | |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 354pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 47W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-11 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD15N06S2L64ATMA2 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# E02:0323_08816594 Infineon Technologies AG |
Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R |
Europe - 2500 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# IPD15N06S2L64ATMA2 Infineon Technologies AG |
Transistor MOSFET N-CH 55V 19A 3-Pin TO-252 T/R - Bulk (Alt: IPD15N06S2L64ATMA2) RoHS: Compliant
|
Americas - 19641 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# SP001063644 Infineon Technologies AG |
Transistor MOSFET N-CH 55V 19A 3-Pin TO-252 T/R (Alt: SP001063644) RoHS: Compliant
|
Europe - 2500 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# C1S322000201228 Infineon Technologies AG |
Trans MOSFET N-CH 55V 19A 3-Pin(2+Tab) TO-252 RoHS: Compliant
pbFree: Yes
Min Qty: 5
Container: Cut Tape
|
1840 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# IPD15N06S2L64ATMA2CT-ND Infineon Technologies AG |
MOSFET N-CH 55V 19A TO252-31 |
1409 In Stock |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# 2709988RL Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 Infineon Technologies AG |
N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252 RoHS: Contact Manufacturer
pbFree: Yes
|
2500 Reel |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
2900 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# 726-IPD15N06S2L64AT Infineon Technologies AG |
MOSFET MOSFET_)40V 60V) RoHS: Compliant
|
1456 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# XSFP00000116981 Infineon Technologies AG |
N-Channel 55 V 64 mOhm 13 nC OptiMOS Enhancement Mode Power-Transistor-TO-252 |
5000 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2. D# 27AC6730 Infineon Technologies AG |
Transistor Polarity:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:19A, On Resistance Rds(on):0.047ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 2500
Container: TAPE & REEL - FULL
|
0 |
|
IPD15N06S2L64ATMA2 D# 12AC9707 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 55V, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:19A, Drain Source Voltage Vds:55V, On Resistance Rds(on):0.047ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.6V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
1863 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 Infineon Technologies AG |
IPD15N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant
|
19641 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 Infineon Technologies AG |
OEM/CM ONLY |
2516 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# 22910291 Infineon Technologies AG |
Trans MOSFET N-CH 55V 19A Automotive 3-Pin(2+Tab) DPAK T/R |
Americas - 2500 |
| Part Number | Description | Stock |
|
IPD15N06S2L64ATMA2 D# 2709988 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 55V, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
1863 |
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| In Stock | 3,336 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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