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For Reference Only
| Part Number | IPD25N06S4L30ATMA2 |
| OEMstron Part # | IPD25N06S4L30ATMA2 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 60V 25A TO252-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD25N06S4L30ATMA2 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPD25N06S4L30ATMA2 Specifications
| Part Number | IPD25N06S4L30ATMA2 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 25A, 10V | |
| Vgs(th) (Max) @ Id | 2.2V @ 8µA | |
| Gate Charge (Qg) (Max) @ Vgs | 16.3nC @ 10V | |
| Vgs (Max) | ±16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1220pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 29W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3-11 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD25N06S4L30ATMA2 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 D# V36:1790_06391069 Infineon Technologies AG |
Trans MOSFET N-CH 60V 25A Automotive 3-Pin(2+Tab) DPAK T/R |
Americas - 0 |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 D# IPD25N06S4L-30ATMA2 Infineon Technologies AG |
Trans MOSFET N-CH 60V 25A 3-Pin TO-252 T/R - Bulk (Alt: IPD25N06S4L-30ATMA2) RoHS: Compliant
|
Americas - 195 |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 D# SP001028636 Infineon Technologies AG |
Trans MOSFET N-CH 60V 25A 3-Pin TO-252 T/R (Alt: SP001028636) RoHS: Compliant
|
Europe - 0 |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 D# IPD25N06S4L30ATMA2CT-ND Infineon Technologies AG |
MOSFET N-CH 60V 25A TO252-31 |
159 In Stock |
|
IPD25N06S4L-30ATMA2 D# 2156-IPD25N06S4L-30ATMA2-ND Rochester Electronics LLC |
IPD25N06 - 55V-60V N-CHANNEL AUT |
195 In Stock |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 D# 2803391 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 INFINEON TECHNOLOGIES |
OEM/CM QUOTES ONLY | NO BROKERS |
11600 |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 D# 726-IPD25N06S4L30ATM Infineon Technologies AG |
MOSFET MOSFET RoHS: Compliant
|
7500 |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 D# 43AC3267 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:25A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.023ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
IPD25N06S4L-30ATMA2 Infineon Technologies AG |
IPD25N06 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant
|
195 |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 Infineon Technologies AG |
OEM/CM ONLY |
61 |
| Part Number | Description | Stock |
|
IPD25N06S4L30ATMA2 D# 2803391 Infineon Technologies AG |
MOSFET, AEC-Q101, N-CH, 60V, 25A, TO-252 RoHS: Compliant
Min Qty: 5
Container: Cut Tape
|
0 |
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