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Part Number | IPD50R950CEATMA1 |
OEMstron Part # | IPD50R950CEATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 500V 4.3A PG-T0252 |
Lifecycle | Discontinued |
RoHS | No RoHS Information |
EDA/CAD Models | IPD50R950CEATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 24 - Nov 29 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IPD50R950CEATMA1 Specifications
Part Number | IPD50R950CEATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Discontinued | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ CE | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 500V | |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 13V | |
Rds On (Max) @ Id, Vgs | 950mOhm @ 1.2A, 13V | |
Vgs(th) (Max) @ Id | 3.5V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 231pF @ 100V | |
FET Feature | - | |
Power Dissipation (Max) | 53W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD50R950CEATMA1 Documents
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Part Number | Description | Stock |
IPD50R950CEATMA1 D# IPD50R950CEATMA1TR-ND Infineon Technologies AG |
MOSFET N-CH 500V 4.3A TO252-3 |
Limited Supply - Call |
Part Number | Description | Stock |
IPD50R950CEATMA1 Infineon Technologies AG |
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33 |
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