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IPD50R950CEATMA1

IPD50R950CEATMA1
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Part Number IPD50R950CEATMA1
OEMstron Part # IPD50R950CEATMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 500V 4.3A PG-T0252
Lifecycle Discontinued
RoHS No RoHS Information
EDA/CAD Models IPD50R950CEATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD50R950CEATMA1 Specifications

Part Number IPD50R950CEATMA1
Brand Infineon Technologies
Lifecycle Discontinued
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™ CE
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 13V
Rds On (Max) @ Id, Vgs 950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 231pF @ 100V
FET Feature -
Power Dissipation (Max) 53W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD50R950CEATMA1 Documents

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Part Number Description Stock

IPD50R950CEATMA1

D# IPD50R950CEATMA1TR-ND

Infineon Technologies AG

MOSFET N-CH 500V 4.3A TO252-3

Limited Supply - Call
Part Number Description Stock

IPD50R950CEATMA1

Infineon Technologies AG

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33

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