For Reference Only
Part Number | IPD60R280P7ATMA1 |
OEMstron Part # | IPD60R280P7ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 600V 12A TO252-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPD60R280P7ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 23 - Nov 28 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPD60R280P7ATMA1 Specifications
Part Number | IPD60R280P7ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ P7 | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 280mOhm @ 3.8A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 190µA | |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 761pF @ 400V | |
FET Feature | - | |
Power Dissipation (Max) | 53W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD60R280P7ATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
IPD60R280P7ATMA1 D# V36:1790_18205319 Infineon Technologies AG |
Trans MOSFET N-CH 600V 12A 3-Pin(2+Tab) DPAK T/R |
Americas - 0 |
Part Number | Description | Stock |
IPD60R280P7ATMA1 D# IPD60R280P7ATMA1 Infineon Technologies AG |
Transistor MOSFET N-CH 600V 12A 3-Pin TO-252 T/R - Bulk (Alt: IPD60R280P7ATMA1) RoHS: Compliant
|
Americas - 803 |
Part Number | Description | Stock |
IPD60R280P7ATMA1 D# SP001658316 Infineon Technologies AG |
Transistor MOSFET N-CH 600V 12A 3-Pin TO-252 T/R (Alt: SP001658316) RoHS: Compliant
|
Europe - 0 |
Part Number | Description | Stock |
IPD60R280P7ATMA1 D# IPD60R280P7ATMA1CT-ND Infineon Technologies AG |
MOSFET N-CH 600V 12A TO252-3 |
958 In Stock |
Part Number | Description | Stock |
IPD60R280P7ATMA1 D# 2986467 Infineon Technologies AG |
MOSFET, N-CH, 600V, 12A, 53W, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
2186 |
Part Number | Description | Stock |
IPD60R280P7ATMA1 Infineon Technologies AG |
Single N-Channel 650 V 280 mOhm 18 nC CoolMOS™ Power Mosfet - DPAK RoHS: Contact Manufacturer
pbFree: Yes
|
0 Reel |
Part Number | Description | Stock |
IPD60R280P7ATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
2564 |
Part Number | Description | Stock |
IPD60R280P7ATMA1 D# 726-IPD60R280P7ATMA1 Infineon Technologies AG |
MOSFET LOW POWER_NEW RoHS: Compliant
|
2986 |
Part Number | Description | Stock |
IPD60R280P7ATMA1 D# 93AC7115 Infineon Technologies AG |
MOSFET, N-CH, 600V, 12A, 53W, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:12A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.214ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3.5V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
2017 |
Part Number | Description | Stock |
IPD60R280P7ATMA1 Infineon Technologies AG |
IPD60R280 - 12A, 600V, 0.28ohm, N-Chanel Power MOSFET, TO-252 RoHS: Compliant
|
803 |
Part Number | Description | Stock |
IPD60R280P7ATMA1 D# 2986467 Infineon Technologies AG |
MOSFET, N-CH, 600V, 12A, 53W, TO-252 RoHS: Compliant
Min Qty: 5
Container: Cut Tape
|
2046 |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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