For Reference Only
Part Number | IPD60R2K0C6ATMA1 |
OEMstron Part # | IPD60R2K0C6ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 600V TO252 |
Lifecycle | Not For New Designs |
RoHS | No RoHS Information |
EDA/CAD Models | IPD60R2K0C6ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 1 - Feb 6 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPD60R2K0C6ATMA1 Specifications
Part Number | IPD60R2K0C6ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Not For New Designs | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ C6 | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2Ohm @ 760mA, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 60µA | |
Gate Charge (Qg) (Max) @ Vgs | 6.7nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 100V | |
FET Feature | - | |
Power Dissipation (Max) | 22.3W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | TO-252-3 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD60R2K0C6ATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 D# V36:1790_16668128 Infineon Technologies AG |
Trans MOSFET N-CH 650V 2.4A 3-Pin(2+Tab) DPAK T/R |
Americas - 0 |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 D# IPD60R2K0C6ATMA1 Infineon Technologies AG |
Trans MOSFET N-CH 650V 2.4A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD60R2K0C6ATMA1) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 D# SP001117714 Infineon Technologies AG |
Trans MOSFET N-CH 650V 2.4A 3-Pin TO-252 T/R (Alt: SP001117714) RoHS: Compliant
|
Europe - 0 |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 D# IPD60R2K0C6ATMA1-ND Infineon Technologies AG |
MOSFET N-CH 600V 2.4A TO252-3 |
Temporarily Out of Stock |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 D# 2839462RL Infineon Technologies AG |
MOSFET, N-CH, 600V, 2.4A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
2863 |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 D# 726-IPD60R2K0C6ATMA1 Infineon Technologies AG |
MOSFET LOW POWER_LEGACY RoHS: Compliant
|
20 |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 D# 49AC0294 Infineon Technologies AG |
MOSFET, N-CH, 600V, 2.4A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:2.4A, Drain Source Voltage Vds:600V, On Resistance Rds(on):1.8ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power DissipationRoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
2363 |
Part Number | Description | Stock |
IPD60R2K0C6ATMA1 D# 2839462 Infineon Technologies AG |
MOSFET, N-CH, 600V, 2.4A, TO-252 RoHS: Compliant
Min Qty: 5
Container: Cut Tape
|
0 |
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Quote Limit | No Limit |
Lead-Time | To be Confirmed |
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