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| Part Number | IPD65R650CEATMA1 |
| OEMstron Part # | IPD65R650CEATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 650V 10.1A TO252 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD65R650CEATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPD65R650CEATMA1 Specifications
| Part Number | IPD65R650CEATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 0.21mA | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V | |
| FET Feature | Super Junction | |
| Power Dissipation (Max) | 86W (Tc) | |
| Operating Temperature | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD65R650CEATMA1 Documents
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| Part Number | Description | Stock |
|
IPD65R650CEATMA1 D# IPD65R650CEATMA1-ND Infineon Technologies AG |
MOSFET N-CH 650V 10.1A TO252-3 |
Limited Supply - Call |
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| In Stock | 153 - More on Order |
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| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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