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For Reference Only
| Part Number | IPD65R660CFDBTMA1 |
| OEMstron Part # | IPD65R660CFDBTMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 650V 6A TO252 |
| Lifecycle | Not For New Designs |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD65R660CFDBTMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPD65R660CFDBTMA1 Specifications
| Part Number | IPD65R660CFDBTMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Not For New Designs | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 660mOhm @ 2.1A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 200µA | |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 615pF @ 100V | |
| FET Feature | - | |
| Power Dissipation (Max) | 62.5W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD65R660CFDBTMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPD65R660CFDBTMA1 D# IPD65R660CFDBTMA1 Infineon Technologies AG |
Trans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R - Bulk (Alt: IPD65R660CFDBTMA1) |
Americas - 2500 |
| Part Number | Description | Stock |
|
IPD65R660CFDBTMA1 D# 2156-IPD65R660CFDBTMA1-ND Rochester Electronics LLC |
MOSFET N-CH 650V 6A TO252-3 |
2500 In Stock |
| Part Number | Description | Stock |
|
IPD65R660CFDBTMA1 D# 2726057RL Infineon Technologies AG |
MOSFET, N-CH, 650V, 6A, TO-252-3 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
IPD65R660CFDBTMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
72500 |
| Part Number | Description | Stock |
|
IPD65R660CFD D# 726-IPD65R660CFD Infineon Technologies AG |
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2 RoHS: Compliant
|
2908 |
| Part Number | Description | Stock |
|
IPD65R660CFDBTMA1 D# 13AC9050 Infineon Technologies AG |
MOSFET, N-CH, 650V, 6A, TO-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:6A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.594ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power DissipationRoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
1304 |
| Part Number | Description | Stock |
|
IPD65R660CFDBTMA1 Infineon Technologies AG |
IPD65R660 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS: Compliant
|
2500 |
| Part Number | Description | Stock |
|
IPD65R660CFDBTMA1 Infineon Technologies AG |
OEM/CM ONLY |
62516 |
| Part Number | Description | Stock |
|
IPD65R660CFDBTMA1 D# 2726057 Infineon Technologies AG |
MOSFET, N-CH, 650V, 6A, TO-252-3 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
1310 |
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Quick Inquiry
| In Stock | 137 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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