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For Reference Only
| Part Number | IPD80R1K2P7ATMA1 |
| OEMstron Part # | IPD80R1K2P7ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 800V 4.5A TO252-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD80R1K2P7ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPD80R1K2P7ATMA1 Specifications
| Part Number | IPD80R1K2P7ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ P7 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.7A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 80µA | |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 500V | |
| FET Feature | - | |
| Power Dissipation (Max) | 37W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD80R1K2P7ATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 D# E02:0323_11590665 Infineon Technologies AG |
800V CoolMOS P7 Power Transistor |
Europe - 2500 |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 D# IPD80R1K2P7ATMA1 Infineon Technologies AG |
LOW POWER_NEW - Tape and Reel (Alt: IPD80R1K2P7ATMA1) RoHS: Compliant
|
Americas - 0 |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 D# SP001644252 Infineon Technologies AG |
LOW POWER_NEW (Alt: SP001644252) RoHS: Compliant
|
Europe - 0 |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 D# IPD80R1K2P7ATMA1CT-ND Infineon Technologies AG |
MOSFET N-CH 800V 4.5A TO252-3 |
4649 In Stock |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 D# 2771319 Infineon Technologies AG |
MOSFET, N-CH, 800V, 4.5A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
18 |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 Infineon Technologies AG |
Single N-Channel 800 V 1.2 Ohm 11 nC CoolMOS™ Power Mosfet - DPAK RoHS: Compliant
pbFree: Yes
|
0 Cut Type/Mini-Reel |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
2900 |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 D# 24AC9041 Infineon Technologies AG |
MOSFET, N-CH, 800V, 4.5A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:4.5A, Drain Source Voltage Vds:800V, On Resistance Rds(on):1ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
1877 |
| Part Number | Description | Stock |
|
IPD80R1K2P7ATMA1 D# 2771319 Infineon Technologies AG |
MOSFET, N-CH, 800V, 4.5A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
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| In Stock | 372 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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Pricing (USD)
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $ 0.0000 | $ 0.0000 |
| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
| 2500 | $ 0.0000 | $ 0.0000 |
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