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IPD80R1K4CEBTMA1

IPD80R1K4CEBTMA1
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Part Number IPD80R1K4CEBTMA1
OEMstron Part # IPD80R1K4CEBTMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 800V 3.9A TO252-3
Lifecycle Discontinued
RoHS No RoHS Information
EDA/CAD Models IPD80R1K4CEBTMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD80R1K4CEBTMA1 Specifications

Part Number IPD80R1K4CEBTMA1
Brand Infineon Technologies
Lifecycle Discontinued
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series CoolMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 3.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2.3A, 10V
Vgs(th) (Max) @ Id 3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 570pF @ 100V
FET Feature -
Power Dissipation (Max) 63W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

IPD80R1K4CEBTMA1 Documents

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Part Number Description Stock

IPD80R1K4CEBTMA1

Infineon Technologies AG

MOSFET N-CH 800V 3.9A TO252-3

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Part Number Description Stock

IPD80R1K4CEBTMA1

D# IPD80R1K4CEBTMA1TR-ND

Infineon Technologies AG

MOSFET N-CH 800V 3.9A TO252-3

Limited Supply - Call
Part Number Description Stock

IPD80R1K4CEBTMA1

Infineon Technologies AG

OEM/CM QUOTES ONLY | NO BROKERS

2900
Part Number Description Stock

IPD80R1K4CEBTMA1

Infineon Technologies AG

OEM/CM ONLY

2516

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