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For Reference Only
| Part Number | IPD80R2K4P7ATMA1 |
| OEMstron Part # | IPD80R2K4P7ATMA1 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 800V 2.5A TO252-3 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPD80R2K4P7ATMA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPD80R2K4P7ATMA1 Specifications
| Part Number | IPD80R2K4P7ATMA1 | |
| Brand | Infineon Technologies | |
| Lifecycle | Active | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | CoolMOS™ P7 | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 800mA, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA | |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 500V | |
| FET Feature | - | |
| Power Dissipation (Max) | 22W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-TO252-3 | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD80R2K4P7ATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 D# IPD80R2K4P7ATMA1 Infineon Technologies AG |
Transistor MOSFET N-CH 800V 2.5A 3-Pin TO-252 T/R - Bulk (Alt: IPD80R2K4P7ATMA1) |
Americas - 5000 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 D# SP001644284 Infineon Technologies AG |
Transistor MOSFET N-CH 800V 2.5A 3-Pin TO-252 T/R (Alt: SP001644284) RoHS: Compliant
|
Europe - 5000 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 D# IPD80R2K4P7ATMA1CT-ND Infineon Technologies AG |
MOSFET N-CH 800V 2.5A TO252-3 |
193 In Stock |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 D# 2771321RL Infineon Technologies AG |
MOSFET, N-CH, 800V, 2.5A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 Infineon Technologies AG |
Single N-Channel 800 V 2.4 Ohm 8 nC CoolMOS™ Power Mosfet - DPAK RoHS: Contact Manufacturer
pbFree: Yes
|
0 Reel |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
5800 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 D# 726-IPD80R2K4P7ATMA1 Infineon Technologies AG |
MOSFET LOW POWER_NEW RoHS: Compliant
|
2904 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 D# XSKDRABV0021242 Infineon Technologies AG |
5000 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 D# 24AC9043 Infineon Technologies AG |
MOSFET, N-CH, 800V, 2.5A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:2.5A, Drain Source Voltage Vds:800V, On Resistance Rds(on):2ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipation RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
2454 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 Infineon Technologies AG |
IPD80R2K4 - 800V CoolMOS N-Channel Power MOSFET RoHS: Compliant
|
5000 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
7731 |
| Part Number | Description | Stock |
|
IPD80R2K4P7ATMA1 D# 2771321 Infineon Technologies AG |
MOSFET, N-CH, 800V, 2.5A, TO-252 RoHS: Compliant
Min Qty: 5
Container: Cut Tape
|
2504 |
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| In Stock | 417 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| 100 | $ 0.0000 | $ 0.0000 |
| 500 | $ 0.0000 | $ 0.0000 |
| 1000 | $ 0.0000 | $ 0.0000 |
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