For Reference Only
Part Number | IPD80R2K8CEATMA1 |
OEMstron Part # | IPD80R2K8CEATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 800V 1.9A TO252-3 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPD80R2K8CEATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 27 - Dec 2 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPD80R2K8CEATMA1 Specifications
Part Number | IPD80R2K8CEATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ CE | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 800V | |
Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 2.8Ohm @ 1.1A, 10V | |
Vgs(th) (Max) @ Id | 3.9V @ 120µA | |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 290pF @ 100V | |
FET Feature | - | |
Power Dissipation (Max) | 42W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-TO252-3 | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD80R2K8CEATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# V72:2272_06384044 Infineon Technologies AG |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
Americas - 3 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# IPD80R2K8CEATMA1 Infineon Technologies AG |
Trans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD80R2K8CEATMA1) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# SP001130970 Infineon Technologies AG |
Trans MOSFET N-CH 800(Min)V 1.9A 3-Pin TO-252 T/R (Alt: SP001130970) RoHS: Compliant
|
Europe - 10 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 Infineon Technologies AG |
COOL MOS - Tape and Reel |
Contact Us |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# IPD80R2K8CEATMA1TR-ND Infineon Technologies AG |
MOSFET N-CH 800V 1.9A TO252-3 |
On Order |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# 2709949 Infineon Technologies AG |
MOSFET, N-CH, 800V, 1.9A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 INFINEON TECHNOLOGIES |
OEM/CM QUOTES ONLY | NO BROKERS |
5800 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 Infineon Technologies AG |
OEM/CM Immediate delivery |
88720 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# 726-IPD80R2K8CEATMA1 Infineon Technologies AG |
MOSFET N-Ch 800V 1.9A DPAK-2 RoHS: Compliant
|
1923 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# 12AC9716 Infineon Technologies AG |
MOSFET, N-CH, 800V, 1.9A, TO-252, Transistor Polarity:N Channel, Continuous Drain Current Id:1.9A, Drain Source Voltage Vds:800V, On Resistance Rds(on):2.4ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power DissipationRoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 Infineon Technologies AG |
OEM/CM ONLY |
2595 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 Infineon Technologies AG |
IN stock Immediate delivery |
88705 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# 53684757 Infineon Technologies AG |
Trans MOSFET N-CH 800V 1.9A 3-Pin(2+Tab) DPAK T/R |
Americas - 22500 |
Part Number | Description | Stock |
IPD80R2K8CEATMA1 D# 2709949 Infineon Technologies AG |
MOSFET, N-CH, 800V, 1.9A, TO-252 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
0 |
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Quote Limit | No Limit |
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