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Part Number | IPI045N10N3GXK |
OEMstron Part # | IPI045N10N3GXK |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 100A TO262-3 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IPI045N10N3GXK PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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IPI045N10N3GXK Specifications
Part Number | IPI045N10N3GXK | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ 3 | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 137A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V | |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 100A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 150µA | |
Gate Charge (Qg) (Max) @ Vgs | 117nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 8410pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 214W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO262-3 | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
IPI045N10N3GXK Documents
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