For Reference Only
Part Number | IPI05CN10N G |
OEMstron Part # | IPI05CN10N-G |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 100A TO262-3 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IPI05CN10N G PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Feb 2 - Feb 7 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IPI05CN10N G Specifications
Part Number | IPI05CN10N G | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | OptiMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 5.4mOhm @ 100A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 181nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 50V | |
FET Feature | - | |
Power Dissipation (Max) | 300W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO262-3 | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
IPI05CN10N G Documents
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IPI05CN10N G Infineon Technologies AG |
MOSFET N-CH 100V 100A TO262-3 |
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IPI05CN10N G D# IPI05CN10NG-ND Infineon Technologies AG |
MOSFET N-CH 100V 100A TO262-3 |
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