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IPI26CN10N G

IPI26CN10N G
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Part Number IPI26CN10N G
OEMstron Part # IPI26CN10N-G
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 100V 35A TO262-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPI26CN10N G PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 25 - Nov 30 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPI26CN10N G Specifications

Part Number IPI26CN10N G
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 26mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 4V @ 39µA
Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2070pF @ 50V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA

IPI26CN10N G Documents

IPI26CN10N G, IPI26CN10N G Datasheet (Total Pages: 12, Size: 1,047.74 KB)
IPI26CN10N G Datasheet CoverIPI26CN10N G Datasheet Page 2IPI26CN10N G Datasheet Page 3IPI26CN10N G Datasheet Page 4IPI26CN10N G Datasheet Page 5IPI26CN10N G Datasheet Page 6IPI26CN10N G Datasheet Page 7IPI26CN10N G Datasheet Page 8IPI26CN10N G Datasheet Page 9IPI26CN10N G Datasheet Page 10IPI26CN10N G Datasheet Page 11IPI26CN10N G Datasheet Page 12
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Part Number Description Stock

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MOSFET N-CH 100V 35A TO262-3

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