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Part Number | IPI47N10S33AKSA1 |
OEMstron Part # | IPI47N10S33AKSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 100V 47A TO262-3 |
Lifecycle | Not For New Designs |
RoHS | No RoHS Information |
EDA/CAD Models | IPI47N10S33AKSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Dec 20 - Dec 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
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IPI47N10S33AKSA1 Specifications
Part Number | IPI47N10S33AKSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Not For New Designs | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | SIPMOS® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 33mOhm @ 33A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 2mA | |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 175W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO262-3 | |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
IPI47N10S33AKSA1 Documents
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Part Number | Description | Stock |
IPI47N10S33AKSA1 D# IPI47N10S33AKSA1 Infineon Technologies AG |
Trans MOSFET N-CH 100V 47A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IPI47N10S33AKSA1) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
IPI47N10S33AKSA1 D# IPI47N10S33AKSA1-ND Infineon Technologies AG |
MOSFET N-CH 100V 47A TO262-3 |
Limited Supply - Call |
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