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| Part Number | IPI80N06S4L05AKSA2 |
| OEMstron Part # | IPI80N06S4L05AKSA2 |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH TO262-3 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPI80N06S4L05AKSA2 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 24 - Mar 1 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPI80N06S4L05AKSA2 Specifications
| Part Number | IPI80N06S4L05AKSA2 | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | Automotive, AEC-Q101, OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 40A, 4.5V | |
| Vgs(th) (Max) @ Id | 2.2V @ 60µA | |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V | |
| Vgs (Max) | ±16V | |
| Input Capacitance (Ciss) (Max) @ Vds | 8180pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 107W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO262-3-1 | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
IPI80N06S4L05AKSA2 Documents
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| Part Number | Description | Stock |
|
IPI80N06S4L05AKSA2 D# IPI80N06S4L05AKSA2-ND Infineon Technologies AG |
MOSFET N-CH 60V 80A TO262-3 |
Limited Supply - Call |
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