For Reference Only
Part Number | IPN80R900P7ATMA1 |
OEMstron Part # | IPN80R900P7ATMA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CHANNEL 800V 6A SOT223 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPN80R900P7ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 26 - Dec 1 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IPN80R900P7ATMA1 Specifications
Part Number | IPN80R900P7ATMA1 | |
Brand | Infineon Technologies | |
Lifecycle | Active | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ P7 | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 800V | |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 900mOhm @ 2.2A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 110µA | |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 500V | |
FET Feature | - | |
Power Dissipation (Max) | 7W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | PG-SOT223 | |
Package / Case | TO-261-3 |
IPN80R900P7ATMA1 Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# E02:0323_11636997 Infineon Technologies AG |
P7 Power Transistor |
Europe - 3000 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# IPN80R900P7ATMA1 Infineon Technologies AG |
Transistor MOSFET N-CH 800V 6A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN80R900P7ATMA1) RoHS: Compliant
|
Americas - 0 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# SP001665000 Infineon Technologies AG |
Transistor MOSFET N-CH 800V 6A 3-Pin SOT-223 T/R (Alt: SP001665000) RoHS: Compliant
|
Europe - 0 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# C1S322000750326 Infineon Technologies AG |
MOSFET RoHS: Compliant
pbFree: Yes
Min Qty: 5
Container: Cut Tape
|
8 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 Infineon Technologies AG |
N-Channel 800V 6A(Tc) 3.5V @ 110uA 900mohms @ 2.2A,10V 7W(Tc) PG-SOT223 MOSFET RoHS |
61 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# IPN80R900P7ATMA1CT-ND Infineon Technologies AG |
MOSFET N-CHANNEL 800V 6A SOT223 |
8440 In Stock |
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# 2986481 Infineon Technologies AG |
MOSFET, N-CH, 800V, 6A, 7W, SOT-223 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
749 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 INFINEON TECHNOLOGIES |
OEM/CM QUOTES ONLY | NO BROKERS |
3480 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# 726-IPN80R900P7ATMA1 Infineon Technologies AG |
MOSFET LOW POWER_NEW RoHS: Compliant
|
2113 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# 93AC7131 Infineon Technologies AG |
MOSFET, N-CH, 800V, 6A, 7W, SOT-223, Transistor Polarity:N Channel, Continuous Drain Current Id:6A, Drain Source Voltage Vds:800V, On Resistance Rds(on):0.77ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power RoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
734 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 Infineon Technologies AG |
OEM/CM ONLY |
4430 |
Part Number | Description | Stock |
IPN80R900P7ATMA1 D# 2986481 Infineon Technologies AG |
MOSFET, N-CH, 800V, 6A, 7W, SOT-223 RoHS: Compliant
Min Qty: 5
Container: Cut Tape
|
715 |
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