Semiconductors
Passive Components
Sensors
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Optoelectronics
For Reference Only
| Part Number | IPP12CN10N G |
| OEMstron Part # | IPP12CN10N-G |
| Manufacturer | Infineon Technologies |
| Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
| Description | MOSFET N-CH 100V 67A TO-220 |
| Lifecycle | Obsolete |
| RoHS | No RoHS Information |
| EDA/CAD Models | IPP12CN10N G PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Feb 2 - Feb 7 (Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |  |
| Shipping |  |
IPP12CN10N G Specifications
| Part Number | IPP12CN10N G | |
| Brand | Infineon Technologies | |
| Lifecycle | Obsolete | |
| RoHS | No RoHS Information | |
| Product Line | Semiconductors | |
| Category | Transistors | |
| Subcategory | FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies | |
| Series | OptiMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 12.9mOhm @ 67A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 83µA | |
| Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4320pF @ 50V | |
| FET Feature | - | |
| Power Dissipation (Max) | 125W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3 | |
| Package / Case | TO-220-3 |
IPP12CN10N G Documents
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Global Supply Chains - Reliable and Authorized Distributor Resources
| Part Number | Description | Stock |
|
IPP12CN10N G Infineon Technologies AG |
MOSFET N-CH 100V 67A TO-220 |
Contact Us |
| Part Number | Description | Stock |
|
IPP12CN10NG Infineon Technologies AG |
Pbf (ship within 1day) - D/C 2010 |
423 |
| Part Number | Description | Stock |
|
IPP12CN10NGXKSA1 D# IPP12CN10NGXKSA1-ND Infineon Technologies AG |
MOSFET N-CH 100V 67A TO220-3 |
Limited Supply - Call |
|
IPP12CN10N G D# IPP12CN10NG-ND Infineon Technologies AG |
MOSFET N-CH 100V 67A TO220-3 |
Limited Supply - Call |
| Part Number | Description | Stock |
|
IPP12CN10N G VBsemi Electronics Co Ltd |
In stock shipping within 2days |
1000 |
|
IPP12CN10NG VBsemi Electronics Co Ltd |
In stock shipping within 2days |
1000 |
| Part Number | Description | Stock |
|
IPP12CN10NG Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
27144 |
| Part Number | Description | Stock |
|
IPP12CN10N G D# NS-IPP12CN10N G Infineon Technologies AG |
OEM/CM ONLY |
8714 |
| Part Number | Description | Stock |
|
IPP12CN10NG Infineon Technologies AG |
POWER FIELD-EFFECT TRANSISTOR, 67A I(D), 100V, 0.0129OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB |
338 |
| Part Number | Description | Stock |
|
IPP12CN10NG Infineon Technologies AG |
OEM/CM ONLY |
516 |
| Part Number | Description | Stock |
|
IPP12CN10NG SANYO Semiconductor Co Ltd |
shipping today |
41 |
| Part Number | Description | Stock |
|
IPP12CN10NG Infineon Technologies AG |
RFQ |
5486 |
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