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Part Number | IPP60R190C6XKSA1 |
OEMstron Part # | IPP60R190C6XKSA1 |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 600V 20.2A TO220 |
Lifecycle | Not For New Designs |
RoHS | No RoHS Information |
EDA/CAD Models | IPP60R190C6XKSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IPP60R190C6XKSA1 Specifications
Part Number | IPP60R190C6XKSA1 | |
Brand | Infineon Technologies | |
Lifecycle | Not For New Designs | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | CoolMOS™ | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 600V | |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 190mOhm @ 9.5A, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 630µA | |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 100V | |
FET Feature | - | |
Power Dissipation (Max) | 151W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Supplier Device Package | PG-TO220-3 | |
Package / Case | TO-220-3 |
IPP60R190C6XKSA1 Documents
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