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IPS110N12N3GBKMA1

IPS110N12N3GBKMA1
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Part Number IPS110N12N3GBKMA1
OEMstron Part # IPS110N12N3GBKMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description MOSFET N-CH 120V 75A TO251-3
Lifecycle Obsolete
RoHS No RoHS Information
EDA/CAD Models IPS110N12N3GBKMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 23 - Nov 28 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPS110N12N3GBKMA1 Specifications

Part Number IPS110N12N3GBKMA1
Brand Infineon Technologies
Lifecycle Obsolete
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series OptiMOS™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 60V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3
Package / Case TO-251-3 Stub Leads, IPak

IPS110N12N3GBKMA1 Documents

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Part Number Description Stock

IPS110N12N3GBKMA1

Infineon Technologies AG

MV POWER MOS - Rail/Tube

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Part Number Description Stock

IPS110N12N3GBKMA1

D# IPS110N12N3GBKMA1-ND

Infineon Technologies AG

MOSFET N-CH 120V 75A TO251-3

Limited Supply - Call

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