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IRF100P219XKMA1

IRF100P219XKMA1
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For Reference Only

Part Number IRF100P219XKMA1
OEMstron Part # IRF100P219XKMA1
Manufacturer Infineon Technologies
Category SemiconductorsTransistorsFETs, MOSFETs - Single
Description TRENCH_MOSFETS
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IRF100P219XKMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Nov 24 - Nov 29 (Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IRF100P219XKMA1 Specifications

Part Number IRF100P219XKMA1
Brand Infineon Technologies
Lifecycle Active
RoHS No RoHS Information
Product Line Semiconductors
Category Transistors
Subcategory FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series StrongIRFET™
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C -
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 12020pF @ 50V
FET Feature -
Power Dissipation (Max) 341W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3

IRF100P219XKMA1 Documents

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