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Part Number | IRF6674TR1PBF |
OEMstron Part # | IRF6674TR1PBF |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 60V 13.4A DIRECTFET |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRF6674TR1PBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 20 - Jan 25 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
IRF6674TR1PBF Specifications
Part Number | IRF6674TR1PBF | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 60V | |
Current - Continuous Drain (Id) @ 25°C | 13.4A (Ta), 67A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 11mOhm @ 13.4A, 10V | |
Vgs(th) (Max) @ Id | 4.9V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V | |
FET Feature | - | |
Power Dissipation (Max) | 3.6W (Ta), 89W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | DIRECTFET™ MZ | |
Package / Case | DirectFET™ Isometric MZ |
IRF6674TR1PBF Documents
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Part Number | Description | Stock |
IRF6674TR1PBF International Rectifier |
Transistor: N-MOSFET, unipolar, HEXFET, 60V, 13.4A, 89W |
49 |
Part Number | Description | Stock |
IRF6674TR1PBF D# IRF6674TR1PBFTR-ND Infineon Technologies AG |
MOSFET N-CH 60V 13.4A DIRECTFET |
Limited Supply - Call |
Part Number | Description | Stock |
IRF6674TR1PBF D# NS-IRF6674TR1PBF International Rectifier |
OEM/CM ONLY |
9065 |
Part Number | Description | Stock |
IRF6674TR1PBF mfr |
RFQ |
2687 |
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