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Part Number | IRF6706S2TRPBF |
OEMstron Part # | IRF6706S2TRPBF |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 25V DIRECTFET S1 |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRF6706S2TRPBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Nov 25 - Nov 30 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IRF6706S2TRPBF Specifications
Part Number | IRF6706S2TRPBF | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 25V | |
Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 63A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 3.8mOhm @ 17A, 10V | |
Vgs(th) (Max) @ Id | 2.35V @ 25µA | |
Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1810pF @ 13V | |
FET Feature | - | |
Power Dissipation (Max) | 1.8W (Ta), 26W (Tc) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | DIRECTFET S1 | |
Package / Case | DirectFET™ Isometric S1 |
IRF6706S2TRPBF Documents
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Part Number | Description | Stock |
IRF6706S2TRPBF International Rectifier |
MOSFET, Power, X0.9 CONTROLFET IN S1 Outline . |
Contact Us |
Part Number | Description | Stock |
IRF6706S2TRPBF D# IRF6706S2TRPBF-ND Infineon Technologies AG |
MOSFET N-CH 25V 17A DIRECTFET |
Limited Supply - Call |
Part Number | Description | Stock |
IRF6706S2TRPBF D# NS-IRF6706S2TRPBF International Rectifier |
OEM/CM ONLY |
5974 |
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