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Part Number | IRF6794MTR1PBF |
OEMstron Part # | IRF6794MTR1PBF |
Manufacturer | Infineon Technologies |
Category | Semiconductors › Transistors › FETs, MOSFETs - Single |
Description | MOSFET N-CH 25V 32A DIRECTFET-MX |
Lifecycle | Obsolete |
RoHS | No RoHS Information |
EDA/CAD Models | IRF6794MTR1PBF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jan 21 - Jan 26 (Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
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IRF6794MTR1PBF Specifications
Part Number | IRF6794MTR1PBF | |
Brand | Infineon Technologies | |
Lifecycle | Obsolete | |
RoHS | No RoHS Information | |
Product Line | Semiconductors | |
Category | Transistors | |
Subcategory | FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies | |
Series | HEXFET® | |
FET Type | N-Channel | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 25V | |
Current - Continuous Drain (Id) @ 25°C | 32A (Ta), 200A (Tc) | |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 1.7mOhm @ 32A, 10V | |
Vgs(th) (Max) @ Id | 2.35V @ 100µA | |
Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 4420pF @ 13V | |
FET Feature | Schottky Diode (Body) | |
Power Dissipation (Max) | 2.8W (Ta), 100W (Tc) | |
Operating Temperature | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Supplier Device Package | DIRECTFET™ MX | |
Package / Case | DirectFET™ Isometric MX |
IRF6794MTR1PBF Documents
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Part Number | Description | Stock |
IRF6794MTR1PBF International Rectifier |
MOSFET N-CH 25V 32A DIRECTFET-MX |
964 |
Part Number | Description | Stock |
IRF6794MTR1PBF D# IRF6794MTR1PBFCT-ND Infineon Technologies AG |
MOSFET N-CH 25V 32A DIRECTFET |
934 In Stock |
Part Number | Description | Stock |
IRF6794MTR1PBF D# NS-IRF6794MTR1PBF International Rectifier |
OEM/CM ONLY |
1511 |
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